SK hynix develops new 4D NAND flash with massive 238 layers, paving the way for faster and massive new ssdThe company has announced.
Unveiled on stage at the Flash Memory Summit in Santa Clara, the new memory chip is described as “the world’s first 238-layer 512Gb TLC 4D NAND” and is expected to enter mass production in the first half of 2023. hopefully.
Compared to the previous 176-layer model, the new NAND is said to offer 50% faster data transfer speeds (at 2.4Gb/s), 21% more energy efficiency for reading data, and a 34% increase in overall productivity .
With the arrival of the 238-layer product, SK hynix will take away the record for the world’s tallest NAND stack from rival manufacturer Micron, whose latest model has 232 layers.
238-layer 4D NAND Flash
NAND flash is a type of non-volatile memory available in all types of storage devices, from memory cards, usb sticks And portable drive for ssd Server and client devices.
The general trend in NAND flash development is toward a reduction in cost per capacity and an increase in storage density, effectively eliminating the traditionally last remaining use cases. Hard Disk Drive, The arrival of the 238-layer product from SK hynix is another step in this journey.
Unlike other NAND products on the market, the latest chips in the company’s range feature a “4D” architecture, whereby logic circuits are housed beneath a storage cell. SK Hynix says this design allows for “smaller cell area per unit, leading to higher production efficiencies”.
“SK Hynix has achieved global top-class competitiveness in terms of cost, performance and quality by introducing 238-layer products based on its 4D NAND technologies,” said Jangdal Choi, Head of Nand Development at SK Hynix.
Perhaps contrary to expectation, the new 238-layer NAND will make its way to client devices first, giving content creators and PC gamers a reason to be excited. new chip will come later Smartphones and high-capacity servers.
SK hynix also revealed that it is developing a 1Tb 238-layer product, which will double the storage density of the latest chip when it arrives next year. “We will continue to innovate to find breakthroughs in technological challenges,” Choi said.
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